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DTIC ADA186726: Radiant Power Degradation of Silicon-Doped Gallium Arsenide and Gallium Aluminum Arsenide Infrared Light-Emitting Diodes.

by: Defense Technical Information Center

Publication date: 1987-05-01

Topics: DTIC Archive, Resimont, William N, AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH, *DIODES, *GALLIUM ARSENIDES, *SILICON, CONTROL, VOLTAGE, DEGRADATION, POWER, RADIATION, DOPING, DENSITY, BEHAVIOR, GALLIUM, ROOM TEMPERATURE, THESES,

Collection: dticarchive; additional_collections

Language: English

This work investigates the use of the capacitance-voltage (C-V), current -voltage (I-V), and radiant power-current-voltage (P-I-V) diode characteristics as a means of modeling the general radiant power degradation of silicon-doped gallium arsenide and gallium aluminum arsenide (GaAs:Si, GaA1As:Si) IREDs. The procedure consists of measuring the initial characteristics, stressing with various operating current densities at room temperature, then periodically repeating the measurements. Control diodes that are not stressed are tested to determine the precision of the measuring apparatus and the normal variations in diode behavior.